Process for producing АIIBVI type semiconductor crystals (2379365)
RF Patent for an invention № 2379365
Published: 22.10.2008


Patent holder (s):
PJSC “State Research and Design Institute of Rare-Metal Industry “Giredmet”


Pavel Andreyevich Averichkin, Aleksander Apollonovich Konovalov, Aleksey Aleksandrovich Shlyonsky, Nikolay Ivanovich Shmatov


The invention relates to electronic engineering material technology, particularly to methods for producing semiconductor crystals from melts to create perfect-structure monocrystal substrates, and can be used for epitaxial structure formation and preparation of electro-optical modulator working substance operating in infrared spectrum. The process is realized by vertical oriented crystallization in quartz vessel coated inside with alternate à-SiO2 and à-SiO1.5:Cn layers, where n=1,0÷4,0; in bottom part of the vessel a full-height hole with diameter of 3-5 mm is made in coating, and uncoated vessel quartz back surface is preactivated with hydrofluoric acid. Technological effect of the invention is ingot monocrystal part yield increase.

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