Process for producing silicon nanocrystalline powder (2359906)
RF Patent for an invention № 2359906
Published: 27.06.2009


Patent holder (s):
PJSC “State Research and Design Institute of Rare-Metal Industry “Giredmet”


A.I. Belogorokhov, Y.N. Parkhomenko, L.I. Trusov


The invention can be used in chemical, fragrance and textile industry. Base silicon powder is supplied to orifice gas flow under pressure and with constant rate. The process of silicon evaporation until atomic vapor formation is performed at microwave discharge plasma temperature of 4000-6000°С. Condensation of silicon atomic vapor is performed in gaseous coolant flow supplying to reactor perpendicularly to atomic silicon flow mixed with carrier gas. Generated silicon nanocrystalline fractions initially fall at solid reflecting surface installed inside the reactor perpendicularly to gaseous coolant flow, and then into collector of finished silicon nanocrystalline powder. Proposed invention helps producing crystal structure silicon nanodispersed powders having particle size of 2,0-30 nm and output of more than 50%; crystal structure nanodispersed powders having nanoparticle oxidized surface with oxide film thickness of no more than few monolayers and crystal core, and output of more than 50%.

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