Patent holder (s):
PJSC “State Research and Design Institute of Rare-Metal Industry “Giredmet”
M.V. Mezhenny, M.G. Mil’vidsky, V.Y. Reznik
1. Process for hardening monocrystalline dislocation-free silicon plates, which differs by two-stage thermal treatment of plates with oxygen content of 6•1017 – 9•1017 cm-3 in inert atmosphere, initially at temperature of 1000-1200 С during 10-15 min, and then at temperature of 600-650 С during 8,0-0,5 hours, with the following air cooling.
2. Process according to Cl. 1, which differs by performing thermal treatment in argon atmosphere.