Patent holder (s):
PJSC “State Research and Design Institute of Rare-Metal Industry “Giredmet”
A.V. Elyutin, V.Y. Zhvirblyansky, G.A. Zolotova
The invention relates to equipment for producing large-size silicon monocrystals by Czochralski method. Technological effect is design simplification, increase of apparatus reliability and process purity. Apparatus contains hermetic chamber having top and bottom parts. Melt-contained crucible is located at the bottom part of the chamber. Seed holder is located at the top part of the chamber and connected with rotary and moving drives. Top part of the chamber has asperity, where plate is installed loosely. Crystal-support instrument contains levers having supports and grips. Supports have guide devices. To the bottom part of guide devices a ring interacting with grips is fixed, and to the top part of them a plate is fixed. While growing monocrystal, seed holder moves up. The plate interacts with seed holder.