Apparatus for growing monocrystals (2097451)
RF Patent for an invention № 2097451
Published: 27.11.1997


Patent holder (s):
PJSC “State Research and Design Institute of Rare-Metal Industry “Giredmet”


V.Y. Zhvirblyansky, A.V. Elyutin, G.S. Kats-Vankhadlo, G.A. Zolotova


The invention relates to technology of producing monocrystals by Czochralski method and provides apparatus operation safety, increases reliability of its performance and reduces heat loss. Summary of the invention: apparatus contains growth chamber, melt crucible, heater having current lead and branch pipe for chamber degassing. Current leads are fixed at the side wall of the chamber. Heater is connected to current leads using graphite rod. The mentioned rod has lock screw. Angle of current lead axis and branch pipe axis is no more than 30°С. Melt ingress to current leads is excluded, and amount of monoxide depositing on it is reduced, reliable electric contact of heater and current leads is provided.

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