Development and projects

Silicon carbide high temperature coating technology

The original recirculating technology provides nonwaste process conduction and secures zero environmental pollution. Conduction of the process in recirculating mode helps to provide deposition rate of 1 mm per hour.

Silicon carbide coatings are deposited by gas-cycle chemical deposition method to the product surface made from carbon and graphite and other materials. Furnace production technology allows their stability increasing and semiconductor nanocrystal production process purity.

Produced coating consists of pure SiC stochiometric composition and doesn’t have impurity atoms in matrix. The coating is gasproof. This technology provides 3,2 g/cm3 coating density, 0,1-1,0 mcm coating thickness and porosity less than 1%. 

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