Development and projects
The research goal is development of scientific basis and technology of effective gettering mediums creation for high-speed diffusant impurities in major diameter silicon blades grown by Czochralski method with allowance for structural defect interaction peculiarities caused by external influence and source nanocrystal structural defects. Research of microdefect formation principles in silicon dislocation-free nanocrystals.
New techniques usage will provide significant (double or triple in a number of cases) output increasing for known-good discrete semiconductor devices and VLSI produced from this material.
The received results will be assumed as a basis for practical recommendations on optimum performance selection of controlled defect structure major diameter silicon nanocrystals growth used for very large scale integrated circuit production.