Development and projects
Defect formation principles in thin-film heteroepitaxial SiGe(C)/Si structures produced by blade direct thermal-compression junction and ion implantation method is detected, recommendations on their production conditions optimization are given.
New mechanism of SiGe/Si heterostructures misfit dislocation initiation is proposed. New approaches to SiGe/Si heterostructure growth are proposed and experimentally tested allowing production of “virtual” substrate with working surface slant dislocation low density. Experimental data is received describing defect formation principles in silicon compositions produced by different crystallographic orientation blade direct thermal-compression junction method and methodological base for their structural characteristics is created.