Development and projects
Processes of epitaxial growth and defect formation in GaN thick layers structures grown by chloride epitaxy on GaAs and sapphire substrates are researched. Researches of nucleating layer formation on different substrates including substrates with modified growing surface relief and layer surface relief formation mechanisms, and structural defect identification are made providing more precise definition of their role in layer growing surface macroscopic defect origin.
Influence of thin buffer layer growth conditions on growth fragment coalescence and nucleation processes at continuous layer formation is detected. Demands to buffer layer structural characteristics and search directions of growing GaN layer influence methods are detected providing significant defect density decrease.