Indium antimonide (InSb)
Indium antimonide monocrystals are used for producing galvanomagnetic devices, optoelectronic devices for environmental control, as well as in defense technology (single and matrix radiation detectors for middle infrared spectrum region).
Growth method | Czochralski method | |||
Crystallographic orientation of ingot axis | (100), (111) | |||
Minimum ingot diameter, mm | 50,8 | |||
Material | unalloyed | alloyed | ||
alloying agent |
none | Te | Ge or Mn | |
polarity of conductivity | n | n | p | |
carrier concentration (77K), cm-3 | (0,3-3)×1015 | 3×1015-1×1018 | 1х1015-5×1018 | |
mobility (77K), cm22/V·sec | >4×105 |
>1×104 | 6,5×103-1×102 | |
dislocation density, cm-2 | ≤200 |
Delivery of monocrystals having parameters different from those specified in the Table is possible.