Indium antimonide (InSb)

Indium antimonide monocrystals are used for producing galvanomagnetic devices, optoelectronic devices for environmental control, as well as in defense technology (single and matrix radiation detectors for middle infrared spectrum region).

Growth method	Czochralski method
Crystallographic orientation of ingot axis	(100), (111)
Minimum ingot diameter, mm	50,8
Material	unalloyed	alloyed
alloying agent	none	Te	Ge or Mn
polarity of conductivity	n	n	p
carrier concentration (77K), cm^-3	(0,3-3)×10¹⁵	3×10¹⁵-1×10¹⁸	1х10¹⁵-5×10¹⁸
mobility (77K), cm2²/V·sec	>4×10⁵	>1×10⁴	6,5×10³-1×10²
dislocation density, cm^-2	≤200

Delivery of monocrystals having parameters different from those specified in the Table is possible.