Structure type	n InP (substrate), n In0,47Ga0,53As(I) n InGaAsP (II)
Thickness of epitaxial layer I, mcm	5
Thickness of epitaxial layer II, mcm	3
Majority carrier concentration in 2-layer structure, cm-3	no more than 1·1015
Majority carrier concentration in layer I, cm-3	1÷10·1014
Majority carrier mobility in layer I, cm2V·sec (300К)	no more than 6000
Photoluminescence wave length in layer I, mcm	1,65±0,05
Photoluminescence wave length in layer II, mcm	1,1±0,05
Difference of lattice spacing at heteroboundaries, Å	no more than 9·10-3
Epitaxial structure area, cm2sup>2	no more than 5

 

Potential production volume: up to 500 cm² per year.

Potential application field: production of optical fiber communication lines.

Product consumers: enterprises of “Minpromenegro”.
 

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Structure type	n GaSb (substrate), n In0,24Ga0,76As0,21Sb0,79 p In0,24Ga0,76As0,21Sb0,79 (I) p GaSb (II)
Substrate parameters:
orientation plane	<100>±10'
carrier concentration, cm-3	(0,5÷1)·1018
thickness of substrate in epitaxial structure, mcm	500±20
Parameters of epitaxial layer (I):
polarity of conductivity	n
area thickness, mcm	2÷3
polarity of conductivity	p
area thickness, mcm	0,5÷1,0

 

Potential production volume: up to 500 cm² per year.

Potential application field: production of photodetectors for spectral range of 1,6÷2,4 mcm, working at room temperature.

Product consumers: enterprises of PJSC "Metallurgical Plant "Sapfir", SDB "Omega".