Structure
Structure JSC «Giredmet» 
GaSb epitaxial layers
ПParameters of InGaAsP/InP epitaxial structures used for photodiodes at spectral range of 1,1÷1,7 mcm
| Structure type | n InP (substrate), n In0,47Ga0,53As(I) n InGaAsP (II) |
| Thickness of epitaxial layer I, mcm | 5 |
| Thickness of epitaxial layer II, mcm | 3 |
| Majority carrier concentration in 2-layer structure, cm-3 | no more than 1·1015 |
| Majority carrier concentration in layer I, cm-3 | 1÷10·1014 |
| Majority carrier mobility in layer I, cm2V·sec (300К) | no more than 6000 |
| Photoluminescence wave length in layer I, mcm | 1,65±0,05 |
| Photoluminescence wave length in layer II, mcm | 1,1±0,05 |
| Difference of lattice spacing at heteroboundaries, Å | no more than 9·10-3 |
| Epitaxial structure area, cm2sup>2 | no more than 5 |
Potential production volume: up to 500 cm2 per year.
Potential application field: production of optical fiber communication lines.
Product consumers: enterprises of “Minpromenegro”.
Parameters of InGaAsSb/GaSb epitaxial structures used for photodetectors at spectral range of 1,6÷2,4 mcm
| Structure type | n GaSb (substrate), n In0,24Ga0,76As0,21Sb0,79 p In0,24Ga0,76As0,21Sb0,79 (I) p GaSb (II) |
| Substrate parameters: | |
| orientation plane | <100>±10' |
| carrier concentration, cm-3 | (0,5÷1)·1018 |
| thickness of substrate in epitaxial structure, mcm | 500±20 |
| Parameters of epitaxial layer (I): | |
| polarity of conductivity | n |
| area thickness, mcm | 2÷3 |
| polarity of conductivity | p |
| area thickness, mcm |
0,5÷1,0 |
Potential production volume: up to 500 cm2 per year.
Potential application field: production of photodetectors for spectral range of 1,6÷2,4 mcm, working at room temperature.
Product consumers: enterprises of PJSC "Metallurgical Plant "Sapfir", SDB "Omega".