Indium arsenide (InAs)
Application field of indium arsenide monocrystals is production of photodetectors, photodiodes and infrared spectrum lasers, as well as electro-optical converters.
Growth method | Czochralski method using melt liquid encapsulation (LEC) | |||
Crystallographic orientation of ingot axis | (100), (111) | |||
Minimum ingot diameter, mm | 50,8; 76,2 | |||
Material | unalloyed | alloyed | ||
alloying agent |
none | S | Zn or Mn | |
polarity of conductivity | n | n | p | |
carrier concentration (77К), cm-3 | ≤3х1016 | 1×1017-3×1018 | 1х1017-5×1019 | |
mobility (77К), cm22/V·sec |
≥40000 | ≥10000 | ≥100 | |
Dislocation density, cm-2 |
Ø 50.8 mm Ø 76.2 mm |
<5×104
<8×104
|
<5×104
<8×104
|
<5×104
<8×104
|
Delivery of monocrystals having parameters different from those specified in the Table is possible.