Indium arsenide (InAs)

Application field of indium arsenide monocrystals is production of photodetectors, photodiodes and infrared spectrum lasers, as well as electro-optical converters.

Growth method		Czochralski method using melt liquid encapsulation (LEC)
Crystallographic orientation of ingot axis		(100), (111)
Minimum ingot diameter, mm		50,8; 76,2
Material		unalloyed	alloyed
alloying agent		none	S	Zn or Mn
polarity of conductivity		n	n	p
carrier concentration (77К), cm^-3		≤3х10¹⁶	1×10¹⁷-3×10¹⁸	1х10¹⁷-5×10¹⁹
mobility (77К), cm2²/V·sec		≥40000	≥10000	≥100
Dislocation density, cm^-2	Ø 50.8 mm Ø 76.2 mm	<5×10⁴ <8×10⁴	<5×10⁴ <8×10⁴	<5×10⁴ <8×10⁴

Delivery of monocrystals having parameters different from those specified in the Table is possible.