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Gallium antimonide (GaSb)

Gallium antimonide monocrystals are used for producing various optoelectronic devices (photodetectors, light-emitting diodes, lasers, including quantum cascade ones) of “middle” infrared range (wave length is 2-4 mcm) used in scientific researches, environmental control (sensors of various chemical elements in gaseous atmosphere) and in defense technology. Another application field is production of thermophotovoltaic devices transforming IR spectrum heat source radiant energy into electric one.

 

Growth method Czochralski method
Crystallographic orientation of ingot axis (100), (111)
Minimum ingot diameter, mm 50,8
Material unalloyed alloyed
alloying
agent		 none Te Si or Ge
тип проводимости p n p
carrier concentration, cm-3 ≤2х1017(300K)
≤2х1016(77K)		 2×1017-1,2×1018 3х1017-1×1019
mobility,,
cm2/V·sec		 ≥700 (300K)
≥2000 (77K)		 2500-3500 1000-250
dislocation density, cm-2
 
≤5×103 
 
≤2×103 
 
≤2×103 

 

Delivery of monocrystals having parameters different from those specified in the Table is possible.