Structure
Structure JSC «Giredmet» 
Gallium antimonide (GaSb)
Gallium antimonide monocrystals are used for producing various optoelectronic devices (photodetectors, light-emitting diodes, lasers, including quantum cascade ones) of “middle” infrared range (wave length is 2-4 mcm) used in scientific researches, environmental control (sensors of various chemical elements in gaseous atmosphere) and in defense technology. Another application field is production of thermophotovoltaic devices transforming IR spectrum heat source radiant energy into electric one.
| Growth method | Czochralski method | |||
| Crystallographic orientation of ingot axis | (100), (111) | |||
| Minimum ingot diameter, mm | 50,8 | |||
| Material | unalloyed | alloyed | ||
| alloying agent |
none | Te | Si or Ge | |
| тип проводимости | p | n | p | |
| carrier concentration, cm-3 | ≤2х1017(300K) ≤2х1016(77K) |
2×1017-1,2×1018 | 3х1017-1×1019 | |
| mobility,, cm2/V·sec |
≥700 (300K) ≥2000 (77K) |
2500-3500 | 1000-250 | |
| dislocation density, cm-2 |
≤5×103
|
≤2×103
|
≤2×103
|
|
Delivery of monocrystals having parameters different from those specified in the Table is possible.