Structure
Structure JSC «Giredmet» 
Gallium arsenide (GaAs)
Gallium arsenide monocrystals are used for producing discrete devices and microwave band integrated circuits, discrete and area photodetectors, light-emitting diodes, photocathodes, solar energy converters, ionizing-radiation detectors, optical products for input-output, focusing and IR radiation modulation, etc.
| Growth method | Czochralski method using melt liquid encapsulation (LEC) | |||
| Crystallographic orientation of ingot axis | (100), (111), (110), (211), (310) | |||
| Minimum ingot diameter, mm | 50,8; 76,2 | |||
| Material | semiinsulating | semiconducting | ||
|
alloying agent |
unalloyed | Si or Те | Zn | |
| polarity of conductivity | n | n | p | |
| carrier concentration, cm-3 | - | 1×1017-3×1018 | 1х1017-3×1019 | |
| specific resistance, Ohm·cm | >1×107 | - | - | |
|
mobility, cm22/V·sec |
>5000 | 4200-1200 | 170-40 | |
| dislocation density, cm-2 |
Ø 50.8 mm Ø 76.2 mm |
<5×104
<8×104
|
<5×104
<8×104
|
<5×104
<8×104
|
Delivery of monocrystals having parameters different from those specified in the Table is possible.