CdHgTe epitaxial layers
Parameters of CdxHg1-xTe epitaxial structures of n and p-type (Experimental-industrial production)
working surface sizes, mm2 | ø30, 20×20 |
working surface sizes, mm2 | ø37, 20×30 |
layer thickness, mcm | 15±5 |
composition, CdTe mol fraction, x |
x=0,208÷0,230 x=0,207÷0,300 |
composition homogeneity by area, CdTe mol fraction CdTe, Δx | ±0,002 |
polarity of conductivity | n, p |
majority carrier concentration at 77К, cm-3 |
n=(1,0÷5,0)·1014 p=(0,5÷3,0)·1016 |
majority carrier mobility at 77К, cm2/V·sec |
µn≥1,0·105 µp≥300 |
photoconduction relaxation time (77К), sec |
≥3·10-7(n-type) ≥3·10-8(p-type) |
dislocation density, cm-2 | <5·104 |
lineages, second phase inclusions | none |
Potential production volume: up to 1000 cm2 per year.
Potential application field: production of photodetectors for spectral range of 3-5 and 8-12 mcm.
Product consumers: PJSC "Metallurgical Plant "Sapfir", FSUE NPO "Orion", FSUE NPO "Alfa"