CdHgTe epitaxial layers

 

working surface sizes, mm2	ø30, 20×20
working surface sizes, mm2	ø37, 20×30
layer thickness, mcm	15±5
composition, CdTe mol fraction, x	x=0,208÷0,230 x=0,207÷0,300
composition homogeneity by area, CdTe mol fraction CdTe, Δx	±0,002
polarity of conductivity	n, p
majority carrier concentration at 77К, cm-3	n=(1,0÷5,0)·1014 p=(0,5÷3,0)·1016
majority carrier mobility at 77К, cm2/V·sec	µn≥1,0·105 µp≥300
photoconduction relaxation time (77К), sec	≥3·10-7(n-type) ≥3·10-8(p-type)
dislocation density, cm-2	<5·104
lineages, second phase inclusions	none

 

 

Potential production volume: up to 1000 cm² per year.

Potential application field: production of photodetectors for spectral range of 3-5 and 8-12 mcm.

Product consumers: PJSC "Metallurgical Plant "Sapfir", FSUE NPO "Orion", FSUE NPO "Alfa"