\"\"
:
Production and serviceInGaAsP/InP and InGaAsSb/GaSb epitaxial layers

InGaAsP/InP and InGaAsSb/GaSb epitaxial layers

 

ПParameters of InGaAsP/InP epitaxial structures used for photodiodes at spectral range of 1,1÷1,7 mcm

 

Structure type n InP (substrate),
n In0,47Ga0,53As(I)
n InGaAsP (II)
Thickness of epitaxial layer I, mcm 5
Thickness of epitaxial layer II, mcm 3
Majority carrier concentration in 2-layer structure, cm-3 no more than 1·1015
Majority carrier concentration in layer I, cm-3 1÷10·1014
Majority carrier mobility in layer I, cm2V·sec (300К) no more than 6000
Photoluminescence wave length in layer I, mcm 1,65±0,05
Photoluminescence wave length in layer II, mcm 1,1±0,05
Difference of lattice spacing at heteroboundaries, Å no more than 9·10-3
Epitaxial structure area, cm2sup>2 no more than 5

 

Potential production volume: up to 500 cm2 per year.

Potential application field: production of optical fiber communication lines.

Product consumers: enterprises of “Minpromenegro”.
 
Parameters of InGaAsSb/GaSb epitaxial structures used for photodetectors at spectral range of 1,6÷2,4 mcm

 

Structure type n GaSb (substrate),
n In0,24Ga0,76As0,21Sb0,79
p In0,24Ga0,76As0,21Sb0,79 (I)
p
GaSb (II)
Substrate parameters:
orientation plane  <100>±10'
carrier concentration, cm-3  (0,5÷1)·1018
thickness of substrate in epitaxial structure, mcm  500±20
Parameters of epitaxial layer (I):
polarity of conductivity  n
area thickness, mcm  2÷3
polarity of conductivity  p
area thickness, mcm

 0,5÷1,0

 

Potential production volume: up to 500 cm2 per year.

Potential application field: production of photodetectors for spectral range of 1,6÷2,4 mcm, working at room temperature.

Product consumers: enterprises of PJSC "Metallurgical Plant "Sapfir", SDB "Omega".