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Production and serviceIndium arsenide (InAs)

Indium arsenide (InAs)

Application field of indium arsenide monocrystals is production of photodetectors, photodiodes and infrared spectrum lasers, as well as electro-optical converters.

 

 

 

 

Growth method Czochralski method using melt liquid encapsulation (LEC)
Crystallographic orientation of ingot axis (100), (111)
Minimum ingot diameter, mm 50,8; 76,2
Material unalloyed alloyed
alloying
agent
none S Zn or Mn
polarity of conductivity n n p
carrier concentration (77К), cm-3 ≤3х1016 1×1017-3×1018 1х1017-5×1019
mobility (77К),
cm22/V·sec
≥40000 ≥10000 ≥100
Dislocation density, cm-2 Ø 50.8 mm

Ø 76.2 mm
 
<5×104 
 
<8×104 
 
<5×104 
 
<8×104 
 
<5×104 

<8×104 

 

Delivery of monocrystals having parameters different from those specified in the Table is possible.