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Production and serviceGallium arsenide (GaAs)

Gallium arsenide (GaAs)

Gallium arsenide monocrystals are used for producing discrete devices and microwave band integrated circuits, discrete and area photodetectors, light-emitting diodes, photocathodes, solar energy converters, ionizing-radiation detectors, optical products for input-output, focusing and IR radiation modulation, etc.

 

 

Growth method Czochralski method using melt liquid encapsulation (LEC)
Crystallographic orientation of ingot axis (100), (111), (110), (211), (310)
Minimum ingot diameter, mm 50,8; 76,2
Material semiinsulating semiconducting
alloying
agent
unalloyed Si or Те Zn
polarity of conductivity n n p
carrier concentration, cm-3 - 1×1017-3×1018 1х1017-3×1019
specific resistance, Ohm·cm >1×107 - -
mobility,
cm22/V·sec
>5000 4200-1200 170-40
dislocation density, cm-2 Ø 50.8 mm

Ø 76.2 mm
 
<5×104 
 
<8×104 
 
<5×104 
 
<8×104 
 
<5×104 

<8×104 

 

Delivery of monocrystals having parameters different from those specified in the Table is possible.