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Analysis and certificationProvided services

Provided services

PROVIDED SERVICES
in the form of measurements, tests, analysis of inorganic substances and materials

   

1. Sample preparation
1.1 Mechanical sample preparation (grinding, dispersion, pressing, weighing, packing; depending on sample type and mass) 
1.2 High-temperature sample preparation (tempering, sintering, alloying)
1.3 Chemical sample preparation
1.3.1 In open system
1.3.2 In analytical resistive heating autoclave
1.3.3 In analytical microwave heating autoclave

2. Detection of matrix, accompanying and alloying components
2.1 Detection (qualitative and semiquantitative analysis)
2.1.1 X-ray fluorescence method
2.1.2 Atomic emission method
2.2 Atomic emission spectral arc excitation source analysis
2.2.1 Direct (instrumental) spectral analysis
2.2.2 Chemical spectral analysis (together with chemical sample preparation)
2.3 Spectral analysis of dissolved sample (after chemical sample preparation)
2.3.1 Atomic emission inductively coupled plasma analysis
2.3.2 Atomic absorption analysis

3. Detection of base component by gravimetric method

4. Detection of substance and material impurity element composition
4.1 Detection of impurity composition of nonferrous, rare and precious metals, graphite, pure oxides, fluorides, semiconductor materials, multicomponent materials such as ores, concentrates, slags, sludges, pure substances, secondary and induced raw materials by solid-state mass-spectrometry method
4.2 Isotopic product analysis:
-detection of isotopic composition;
-detection of isotope chemical composition.
4.3 Detection of nonisotopic product isotopic composition
4.4 Method of atomic emission solid-state arc excitation source analysis (pure metals, their oxides, semiconductors)

5. Detection of humidity (burning loss)

6. Indentation of accompanying forms
6.1 Test report
6.2 Sample chemical composition certificate
6.3 Batch chemical composition certificate (in consort with certification authority)

7. Measurement of semiconductor material specific resistance - up to 10 000 Ohm·cm

8.Measurement of silicon charge carrier life time by photoconductivity decay method – up to 1000 mcs at specific resistance no less than 0.5 Ohm·cm

9. Detection of semiconductor polarity of conductivity

10. Measurement of charge carrier concentration and mobility by Hall method

11.Detection of silicon shallow impurity center type and concentration by low-temperature photoluminescence method - B, P, As, Al, Ga impurities, concentration is >1011 см-3 at compensation factor > 10-2

12.Determination of parameters and semiconductor deep center local distribution by methods of relaxation spectroscopy and cathodoluminescence

13.Detection of oxygen and carbon in silicon by optical method with oxygen detection limit > 1·1017 cm–3 at acceptable electrical resistance no less than 10-1 Ohm·cm for n-type and 1 Ohm·cm for p-type, and carbon detection limit > 2·1016 cm–3 at spectrophotometer Perkin-Elmer 983 and > 3·1015 cm–3 at Fourier spectrophotometer by Brucker at acceptable electrical resistance no less than 1 Ohm·cm for n- and p-type

14.Detection of impurity local concentration and space distribution in inorganic materials by method of local X-ray spectrum analysis (locality and lateral resolution is up to 1 mcm, detection limit is up to 0.01%)

15.Detection of element chemical state in inorganic materials by methods of photoelectron and Auger spectroscopy

16.Optical measurements of phonon spectrum in inorganic materials

17.Measurement of photoconductivity spectrum in semiconductor structures in wave numbers range of 10-5000 10-5000 cm-1

18.Detection of tension in semiconductor materials transparent in near infrared spectrum by photoelasticity method.

19.Measurement of microbrittleness and microhardness in temperature range of 100-600oС by Knupp and Wickers indenter.

20.Measurement of specific resistance distribution microheterogeneity and free charge carrier concentration in Ge and Si monocrystals by spreading resistance method in compliance with standard ASTM F672.

21.Complex research of silicon crystal sample physical-chemical and structural properties:

 

  • Measurement of semiconductor material specific resistance - up to 10 000 Ohm·cm
  • Measurement of silicon charge carrier life time by photoconductivity decay method – up to 1000 mcs at specific resistance no less than 0.5 Ohm·cm
  • Detection of semiconductor polarity of conductivity  
  • Measurement of charge carrier concentration and mobility by Hall method  
  • Detection of silicon shallow impurity center type and concentration by low-temperature photoluminescence method - B, P, As, Al, Ga impurities, concentration is >1011 cm-3 at compensation factor > 10-2 
  • Determination of parameters and semiconductor deep center local distribution by methods of relaxation spectroscopy and cathodoluminescence  
  • Measurement of photoconductivity spectrum in semiconductor structures in wave numbers range of 10-5000 сm-1 
  • Detection of tension in semiconductor materials transparent in near infrared spectrum by photoelasticity method  
  • Measurement of microbrittleness and microhardness in temperature range of 100-600oС by Knupp and Wickers indenter
  • Measurement of specific resistance distribution microheterogeneity and free charge carrier concentration in Ge and Si monocrystals by spreading resistance method in compliance with standard ASTM F672 
  • Measurement of silicon multilayer structure alloyed profiles by angle lap spreading resistance method
  • Study of semiconductor crystal structure peculiarities using scanning electron microscopy
  • Measurement of thin layer thickness and superlattice geometrics
  • Measurement of majority charge carrier concentration and silicon specific resistance by Hall effect method in temperature range of 300-4 К
  • Measurement of crystal lattice parameters to ± 5·10-4 Å.
  • Measurement of monocrystal plate surface misorientation angles (standard samples) comparative to crystallographic planes (hkl)
  • Topographical control of monocrystal surface and volume defects (sectional topography, X-ray beam passing and reflection topography)
  • Determination of microdefect type, nature, size and concentration by scanning electron microscopy in semiconductor materials and structures
  • Study of defect formation process in semiconductor plates and structures using electron microscopy
  • Determination of TiO2 and ZrO2 powder type, nature, size by scanning electron microscopy
  • Determination of damaged layer parameters in plates of Si and other semiconductor materials using X-ray diffraction methods of research at mechanical treatment


22.Heavy metal content analysis of environmental objects (soil, water, air)

23. Development of standards, technical conditions and other legal documentation for methods of analytical control of rare, nonferrous, precious metals, compounds and alloys based on them

24.Certification of metal-contained scrap and wastes